Visible light surface emitting semiconductor laser
文献类型：专利
| 作者 | OLBRIGHT, GREGORY R.; JEWELL, JACK L. |
| 发表日期 | 1997-06-24 |
| 专利号 | US5642376 |
| 著作权人 | VIXEL CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Visible light surface emitting semiconductor laser |
| 英文摘要 | A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m lambda /2neff where m is an integer, lambda is the free-space wavelength of the laser radiation and neff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. For radiation in the yellow to green portion of the spectrum, the laser includes an active layer of GaP or AlGaP quantum wells and AlP/AlGaP mirrors. For radiation in the blue portion of the spectrum, the laser includes an active region of InGaN or GaN quantum wells and AlN/AlGaN mirrors. |
| 公开日期 | 1997-06-24 |
| 申请日期 | 1993-03-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47819]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | VIXEL CORPORATION |
| 推荐引用方式 GB/T 7714 | OLBRIGHT, GREGORY R.,JEWELL, JACK L.. Visible light surface emitting semiconductor laser. US5642376. 1997-06-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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