Monolithic semiconductor laser array of radially disposed lasers
文献类型：专利
| 作者 | KAMIZATO, TAKESHI; HIRANO, RYOICHI |
| 发表日期 | 1997-06-24 |
| 专利号 | US5642373 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Monolithic semiconductor laser array of radially disposed lasers |
| 英文摘要 | A monolithic semiconductor laser array includes an insulating substrate, a plurality of semiconductor layers epitaxially grown on the substrate and forming a laser structure, and at least one groove transverse to the substrate extending through the semiconductor layers into the substrate, dividing the semiconductor laser structure into at least two mutually isolated parts. Within each of the isolated parts of the semiconductor laser structure, a first groove includes a side wall transverse to the substrate and forming a first resonator facet of a semiconductor laser. A second groove in each of the parts includes a second side wall transverse to the substrate and opposite the first side wall, forming a second resonator facet of the semiconductor laser in that part. Each second groove also includes a third side wall oblique to the substrate and opposite the second side wall for reflecting light from the respective semiconductor laser so that light from each of the semiconductor lasers is emitted along a common axis transverse to the substrate. The second grooves are arranged radially about a common point on the substrate. The semiconductor lasers may be electrically connected in series to each other. |
| 公开日期 | 1997-06-24 |
| 申请日期 | 1995-10-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47824]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAMIZATO, TAKESHI,HIRANO, RYOICHI. Monolithic semiconductor laser array of radially disposed lasers. US5642373. 1997-06-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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