Method for improving the efficiency of epitaxially produced quantum dot semiconductor components
文献类型：专利
| 作者 | SELLIN, ROMAN; LEDENSTOV, NIKOLAI N.; BIMBERG, DIETER |
| 发表日期 | 2005-09-13 |
| 专利号 | US6942731 |
| 著作权人 | SEOUL SEMICONDUCTOR CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for improving the efficiency of epitaxially produced quantum dot semiconductor components |
| 英文摘要 | The invention relates to a method for improving the efficiency of epitaxially grown quantum dot semiconductor components having at least one quantum dot layer. The efficiency of semiconductor components containing an active medium consisting of quantum dots is often significantly below the theoretically possible values. The inventive method enables the efficiency of the relevant component to be clearly increased without substantially changing the growth parameters of the various epitaxial layers. In order to improve the efficiency of the component, the crystal is morphologically changed when the growth of the component is interrupted at the point in the overall process at which the quantum dots of a layer have just been covered. The growth front is smoothed at the same time, leading to, for example, a reduction in waveguide loss as the thickness of the waveguide is more homogeneous if the relevant component has one such waveguide. Simultaneously, smoothing the growth front enables the quantum dot layers to be stacked closer together than before, thereby increasing the volume filling factor. The modal gain is thus increased, for example for lasers or amplifiers. |
| 公开日期 | 2005-09-13 |
| 申请日期 | 2001-08-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47825]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEOUL SEMICONDUCTOR CO., LTD. |
| 推荐引用方式 GB/T 7714 | SELLIN, ROMAN,LEDENSTOV, NIKOLAI N.,BIMBERG, DIETER. Method for improving the efficiency of epitaxially produced quantum dot semiconductor components. US6942731. 2005-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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