Low capacitance optoelectronic device
文献类型：专利
| 作者 | KROPP, JOERG-REINHARDT; LEDENTSOV, NIKOLAY; SHCHUKIN, VITALY |
| 发表日期 | 2018-03-13 |
| 专利号 | US9917419 |
| 著作权人 | VI SYSTEMS GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Low capacitance optoelectronic device |
| 英文摘要 | An optoelectronic semiconductor device is disclosed wherein the device is a vertical-cavity surface-emitting laser or a photodiode containing a section, the top part of which is electrically isolated from the rest of the device. The electric isolation can be realized by etching a set of holes and selective oxidation of AlGaAs layer or layers such that the oxide forms a continuous layer or layers everywhere beneath the top surface of this section. Alternatively, a device can be grown epitaxially on a semi-insulating substrate, and a round trench around a section of the device can be etched down to the semi-insulating substrate thus isolating this section electrically from the rest of the device. Then if top contact pads are deposited on top of the electrically isolated section, the pads have a low capacitance, and a pad capacitance below two hundred femto-Farads, and the total capacitance of the device below three hundred femto-Farads can be reached. |
| 公开日期 | 2018-03-13 |
| 申请日期 | 2016-06-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47842]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | VI SYSTEMS GMBH |
| 推荐引用方式 GB/T 7714 | KROPP, JOERG-REINHARDT,LEDENTSOV, NIKOLAY,SHCHUKIN, VITALY. Low capacitance optoelectronic device. US9917419. 2018-03-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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