Semiconductor light-emitting device and manufacturing method for the same
文献类型：专利
| 作者 | HIROSE, KAZUYOSHI; KUROSAKA, YOSHITAKA; SUGIYAMA, TAKAHIRO; TAKIGUCHI, YUU; NOMOTO, YOSHIRO |
| 发表日期 | 2018-06-05 |
| 专利号 | US9991669 |
| 著作权人 | HAMAMATSU PHOTONICS K.K. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light-emitting device and manufacturing method for the same |
| 英文摘要 | The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image. |
| 公开日期 | 2018-06-05 |
| 申请日期 | 2017-07-21 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47847]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HAMAMATSU PHOTONICS K.K. |
| 推荐引用方式 GB/T 7714 | HIROSE, KAZUYOSHI,KUROSAKA, YOSHITAKA,SUGIYAMA, TAKAHIRO,et al. Semiconductor light-emitting device and manufacturing method for the same. US9991669. 2018-06-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。