Vertical-cavity surface-emitting laser with bottom dielectric distributed bragg reflector
文献类型:专利
作者 | HWANG, WEN-YEN; ANSELM, KLAUS ALEXANDER; MURRY, STEFAN J.; LIN, CHIH-HSIANG; ZHENG, JUN; BAILLARGEON, JAMES N. |
发表日期 | 2003-04-15 |
专利号 | US6549556 |
著作权人 | APPLIED OPTOELECTRONICS, INC. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Vertical-cavity surface-emitting laser with bottom dielectric distributed bragg reflector |
英文摘要 | A metal bonded vertical-cavity surface-emitting laser (VCSEL) structure with a bottom dielectric distributed Bragg reflector (DBR) mirror, and method for fabricating the VCSEL structure. The VCSEL structure consists a metal bonding layer disposed on a submount at a bottom side of the metal bonding layer; a bottom cavity mirror comprising a bottom dielectric distributed Bragg reflector (DBR) disposed within the metal bonding layer, the bottom dielectric DBR having a reflectance band including the lasing wavelength; a bottom current-spreading layer disposed on said bottom dielectric DBR and on a substantially flat, annular top surface of said metal bonding layer; a semiconductor active region disposed on the bottom current-spreading layer, said active region capable of stimulated emission at the lasing wavelength; and a top cavity mirror disposed above the active region and having a reflectance band including the lasing wavelength. |
公开日期 | 2003-04-15 |
申请日期 | 2001-11-30 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/48693] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | APPLIED OPTOELECTRONICS, INC. |
推荐引用方式 GB/T 7714 | HWANG, WEN-YEN,ANSELM, KLAUS ALEXANDER,MURRY, STEFAN J.,et al. Vertical-cavity surface-emitting laser with bottom dielectric distributed bragg reflector. US6549556. 2003-04-15. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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