中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Vertical-cavity surface-emitting laser with bottom dielectric distributed bragg reflector

文献类型:专利

作者HWANG, WEN-YEN; ANSELM, KLAUS ALEXANDER; MURRY, STEFAN J.; LIN, CHIH-HSIANG; ZHENG, JUN; BAILLARGEON, JAMES N.
发表日期2003-04-15
专利号US6549556
著作权人APPLIED OPTOELECTRONICS, INC.
国家美国
文献子类授权发明
其他题名Vertical-cavity surface-emitting laser with bottom dielectric distributed bragg reflector
英文摘要A metal bonded vertical-cavity surface-emitting laser (VCSEL) structure with a bottom dielectric distributed Bragg reflector (DBR) mirror, and method for fabricating the VCSEL structure. The VCSEL structure consists a metal bonding layer disposed on a submount at a bottom side of the metal bonding layer; a bottom cavity mirror comprising a bottom dielectric distributed Bragg reflector (DBR) disposed within the metal bonding layer, the bottom dielectric DBR having a reflectance band including the lasing wavelength; a bottom current-spreading layer disposed on said bottom dielectric DBR and on a substantially flat, annular top surface of said metal bonding layer; a semiconductor active region disposed on the bottom current-spreading layer, said active region capable of stimulated emission at the lasing wavelength; and a top cavity mirror disposed above the active region and having a reflectance band including the lasing wavelength.
公开日期2003-04-15
申请日期2001-11-30
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/48693]  
专题半导体激光器专利数据库
作者单位APPLIED OPTOELECTRONICS, INC.
推荐引用方式
GB/T 7714
HWANG, WEN-YEN,ANSELM, KLAUS ALEXANDER,MURRY, STEFAN J.,et al. Vertical-cavity surface-emitting laser with bottom dielectric distributed bragg reflector. US6549556. 2003-04-15.

入库方式: OAI收割

来源:西安光学精密机械研究所

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