Forming tungsten structures.
文献类型：专利
| 作者 | DEPPE DENNIS GLENN; FELDMAN LEONARD CECIL; KOPF ROSE FASANO; SCHUBERT ERDMANN FREDERICK; TU LI-WEI; ZYDZIK GEORGE JOHN |
| 发表日期 | 1995-04-15 |
| 专利号 | SG31195G |
| 著作权人 | AT&T CORP. |
| 国家 | 新加坡 |
| 文献子类 | 发明申请 |
| 其他题名 | Forming tungsten structures. |
| 英文摘要 | This invention is a semiconductor vertical cavity surface emitting laser comprising a lasing cavity with an active layer (14), a bottom (rear) mirror (12) and a top (front) mirror (17), and a front and rear electrodes (17,18) for applying excitation current in direction substantially parallel to the direction of optical propagation. In accordance with this invention the front mirror comprises a thin, semitransparent metal layer (17) which also acts as the front electrode. The metal layer is upon a highly doped layer (16) forming a non-alloyed ohmic contact. The metal is selected from Ag and Al and is deposited in thickness ranging from 5 to 55 nm. The VCSEL is a semiconductor device wherein the semiconductor material is a III-V or II-VI compound semiconductor. For a VCSEL with GaAs active layer, the light output from the front metal mirror/electrode side yields a high external differential quantum efficiency as high as 54 percent. This is the highest quantum efficiency obtained in VCSEL structures. Quantum efficiences on the order of 10 to 30 percent are typical for prior art VCSEL structures. The VCSEL is suitable for fabrication utilizing planar technology. |
| 公开日期 | 1995-09-18 |
| 申请日期 | 1991-05-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/48880]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T CORP. |
| 推荐引用方式 GB/T 7714 | DEPPE DENNIS GLENN,FELDMAN LEONARD CECIL,KOPF ROSE FASANO,et al. Forming tungsten structures.. SG31195G. 1995-04-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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