Method for fabricating a VCSEL with ion-implanted current-confinement structure
文献类型：专利
| 作者 | HWANG, WEN-YEN; ANSELM, KLAUS ALEXANDER |
| 发表日期 | 2006-04-11 |
| 专利号 | US7026178 |
| 著作权人 | APPLIED OPTOELECTRONICS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating a VCSEL with ion-implanted current-confinement structure |
| 英文摘要 | Methods for fabricating a VCSEL having current confinement, the VCSEL having a substrate, a semiconductor active region, and a bottom mirror disposed between the substrate and the active region. A first top spacer layer is epitaxially grown on the active region, the first top spacer layer comprising a current-spreading buffer layer disposed on the active region, a current-confinement layer disposed on the buffer layer, and a current-spreading platform layer disposed on the current-confinement layer, wherein the combined thickness of the platform and current-confinement layers is less than the thickness of the buffer layer. A current-confinement structure having an annular region of enhanced resistivity and a central aperture of comparatively lower resistivity is formed in the current-confinement layer using ion implantation. Subsequently, epitaxial regrowth is performed to form a second top spacer layer on the platform layer, said second top spacer layer comprising a top current-spreading layer. The resulting current-confinement structure is the result of a shallower ion implantation and thus has more precise dimensions and can be closer to the active region. |
| 公开日期 | 2006-04-11 |
| 申请日期 | 2001-11-13 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/48932]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | APPLIED OPTOELECTRONICS, INC. |
| 推荐引用方式 GB/T 7714 | HWANG, WEN-YEN,ANSELM, KLAUS ALEXANDER. Method for fabricating a VCSEL with ion-implanted current-confinement structure. US7026178. 2006-04-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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