Vertical cavity semiconductor laser
文献类型：专利
| 作者 | CHOQUETTE, KENT D.; FREUND, ROBERT S.; HONG, MINGHWEI; VAKHSHOORI, DARYOOSH |
| 发表日期 | 1996-09-24 |
| 专利号 | US5559053 |
| 著作权人 | LUCENT TECHNOLOGIES INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Vertical cavity semiconductor laser |
| 英文摘要 | This invention involves a vertical cavity surface emitting laser ("VCSEL") having a Group III-V semiconductor epitaxial mesa structure with an electrically insulating sidewall located on the mesa's sidewalls for confinement of the optical radiation generated in the laser. A suitably doped Group III-V epitaxial layer or a layer of insulating material such as silicon dioxide acts as the insulating sidewall layer. Advantageously, the structure has a self-aligned ohmic contact layer located everywhere on the top surface of the epitaxial mesa structure. |
| 公开日期 | 1996-09-24 |
| 申请日期 | 1995-06-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/49011]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUCENT TECHNOLOGIES INC. |
| 推荐引用方式 GB/T 7714 | CHOQUETTE, KENT D.,FREUND, ROBERT S.,HONG, MINGHWEI,et al. Vertical cavity semiconductor laser. US5559053. 1996-09-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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