Method of making a VCSEL with passivation
文献类型：专利
| 作者 | GRODZINSKI, PIOTR; LEBBY, MICHAEL S. |
| 发表日期 | 1997-08-26 |
| 专利号 | US5661075 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of making a VCSEL with passivation |
| 英文摘要 | A substrate (103) having a first stack of DBRs (106), an active region (118), and a second stack of DBRs (138) is provided. An etch mask (146) is formed on the second stack of DBRs (138) and etched. The second stack of DBRs (138), the active region (118), and a portion of the first stack of DBRs (106) are subsequently etched. A portion of the etch mask (146) is removed from the etch mask (146). A material layer (202, 302) is then selectively deposited on portions of the second stack of DBRs (138), the active region (118), and the first stack of DBRs (106) by either selective epitaxial over-growth or mass-transfer processes, thereby passivating the VCSEL (101). |
| 公开日期 | 1997-08-26 |
| 申请日期 | 1995-02-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/49013]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | GRODZINSKI, PIOTR,LEBBY, MICHAEL S.. Method of making a VCSEL with passivation. US5661075. 1997-08-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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