Vertical cavity surface emitting laser diode (VCSEL) with enhanced emitting efficiency
文献类型：专利
| 作者 | ONISHI, YUTAKA |
| 发表日期 | 2011-05-31 |
| 专利号 | US7953135 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Vertical cavity surface emitting laser diode (VCSEL) with enhanced emitting efficiency |
| 英文摘要 | A vertical cavity surface emitting laser diode (VCSEL) is disclosed, which reduces the light scattering by the step formed at the interface between the dielectric DBR and the semiconductor that reflects the mesa shape of the tunnel junction. The dielectric DBR of the invention includes a plurality of first films with relatively smaller refractive index and a plurality of second films with relatively larger refractive index. These first and second films are alternately stacked to each other to cause the periodic structure of the refractive indices. The VCSEL of the invention, different from the conventional device, provides the dielectric film with relatively larger refractive index that directly comes in contact with the semiconductor to set the node of the optical standing wave at the interface between the dielectric DBR and the semiconductor. |
| 公开日期 | 2011-05-31 |
| 申请日期 | 2008-08-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/49561]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | ONISHI, YUTAKA. Vertical cavity surface emitting laser diode (VCSEL) with enhanced emitting efficiency. US7953135. 2011-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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