Self-assembly of reduced graphene oxide at liquid-air interface for organic field-effect transistors
文献类型：期刊论文
| 作者 | Ren SD(任申冬) ; Li RJ(李荣金) ; Meng XJ(孟祥建) ; Li HX(李洪祥) |
| 刊名 | J. Mater. Chem.
 |
| 出版日期 | 2012 |
| 卷号 | 22期号:13页码:6171-6175 |
| ISSN号 | 0959-9428 |
| 其他题名 | Self-assembly of reduced graphene oxide at liquid-air interface for organic field-effect transistors |
| 通讯作者 | 李洪祥 |
| 英文摘要 | A new method to prepare reduced graphene oxide (RGO) films was reported. In this method, RGO thin films can be prepared for large areas with controllable thickness and high temperature (>500 degrees C) is not required. The applications of RGO thin films as electrodes of organic field-effect transistors (OFETs) were investigated by bottom-contact p- and n-channel OFETs using copper phthalocyanine and copper hexadecafluorophthalocyanine as semiconductors. Transistor characterization showed the RGO electrode devices displayed higher mobilities than similar OFETs with Au electrodes, suggesting RGO is a good candidate for OFET electrodes. |
| 学科主题 | 高分子化学 |
| 收录类别 | SCI |
| 原文出处 | http://dx.doi.org/10.1039/c2jm16232f |
| 语种 | 英语 |
| WOS记录号 | WOS:000301195300039 |
| 公开日期 | 2013-08-23 |
| 源URL | [http://202.127.28.38/handle/331003/28425]  |
| 专题 | 上海有机化学研究所_高分子材料研究室 |
| 推荐引用方式 GB/T 7714 | Ren SD,Li RJ,Meng XJ,et al. Self-assembly of reduced graphene oxide at liquid-air interface for organic field-effect transistors[J]. J. Mater. Chem.,2012,22(13):6171-6175. |
| APA | 任申冬,李荣金,孟祥建,&李洪祥.(2012).Self-assembly of reduced graphene oxide at liquid-air interface for organic field-effect transistors.J. Mater. Chem.,22(13),6171-6175. |
| MLA | 任申冬,et al."Self-assembly of reduced graphene oxide at liquid-air interface for organic field-effect transistors".J. Mater. Chem. 22.13(2012):6171-6175. |
入库方式： OAI收割
来源：上海有机化学研究所
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