Vertical cavity surface emitting laser with doped active region and method of fabrication
文献类型：专利
| 作者 | JIANG, WENBIN; LEBBY, MICHAEL S.; RAMDANI, JAMAL |
| 发表日期 | 2000-05-09 |
| 专利号 | US6061380 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Vertical cavity surface emitting laser with doped active region and method of fabrication |
| 英文摘要 | VCSEL for high speed operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The active region includes a plurality of quantum well layers, or structures, and a plurality of doped barrier layers. The doping of the barrier layers allows for a faster recombination time of the carriers prior to any occurrence of lateral carrier diffusion. This faster recombination time of the carriers prevents turn-off tails when the VCSEL device is switched off. |
| 公开日期 | 2000-05-09 |
| 申请日期 | 1997-09-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/49864]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | JIANG, WENBIN,LEBBY, MICHAEL S.,RAMDANI, JAMAL. Vertical cavity surface emitting laser with doped active region and method of fabrication. US6061380. 2000-05-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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