Optical integrated circuit and manufacturing method thereof
文献类型：专利
| 作者 | OE KUNISHIGE; TAKEUCHI HIROAKI; KASATANI KAZUO |
| 发表日期 | 1991-01-21 |
| 专利号 | JP1991012983A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical integrated circuit and manufacturing method thereof |
| 英文摘要 | PURPOSE:To improve sensibility, and the relation between signals and noise, and simplify structure by providing a semiconductor layer which has made simultaneous progress on an active layer of semiconductor laser and a light absorption layer of an optical detector, adopting a multilayer structure which exceeds two layers and installing a light confinement layer with low carrier density to said light absorption layer. CONSTITUTION:A variable wavelength semiconductor 2, a directional coupler type three decibel coupler 3, and two pin photodiode optical wave detectors 4 and 5 are integrated on the same substrate It is designed by a multilayer structure which exceeds two layers where both an active layer 32 of the semiconductor layer 2 and the light absorption layer 32' of the optical wave detectors 4 and 5 can grow simultaneously. Furthermore, an n type light confinement layer 34 having low carrier density is installed to the light absorption layer 32' of the optical wave detectors 4 and 5. At the same time, the semiconductor laser 2 or the optical wave detectors 4 and 5 are coupled with a semiconductor wave detector by a butt joint, where selection growth is adopted, which improves the performance of the optical wave detectors or the optical coupling efficiency. It is, therefore, possible to improve sensibility and the ratio between signal and noise, and simplify the structure. |
| 公开日期 | 1991-01-21 |
| 申请日期 | 1989-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50561]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | OE KUNISHIGE,TAKEUCHI HIROAKI,KASATANI KAZUO. Optical integrated circuit and manufacturing method thereof. JP1991012983A. 1991-01-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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