Method of manufacturing semiconductor device
文献类型：专利
| 作者 | HASEGAWA KAZUYOSHI |
| 发表日期 | 1991-03-20 |
| 专利号 | JP1991066191A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of manufacturing semiconductor device |
| 英文摘要 | PURPOSE:To eliminate the need for soldering and scrub work, and then enable simultaneous bonding of them by forming Au layers and Sn layers between a semiconductor chip and a sub-mount and between the sub-mount and a heat sink block so that a specific layer thickness ratio may be available and melting the layers to form an Au-Sn alloy layer. CONSTITUTION:An LD chip 1, a sub-mount 2, and a heat sink block 6 are laminated consecutively on a heat stage 10. Then, they are heated at a temperature of 280 deg.C or above with proper weight being applied to the upper surface of the LD chip 1, which melts and diffuses Au layers 3, and 4, an Sn layer 11, Au layer 7, and 8, and an Sn layer 12 respectively in each junction between the LD chip 1 and the sub-mount 2, and the sub-mount 2 and a heat sink block 6, thereby forming AuSn alloys 13 and 14 so that the LD chip 1 may be interfaced with the sub-mount 2 while the sub-mount 2 may be bonded with the heat sink block 6. Since the Au-Sn alloy layers 13 and 14 have a specific thickness ratio (about 3:2) between the Au layer and Sn layer, the layers 13 and 14 becomes an alloy of 80wt.% Au and 20wt.% Sn. |
| 公开日期 | 1991-03-20 |
| 申请日期 | 1989-08-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50572]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HASEGAWA KAZUYOSHI. Method of manufacturing semiconductor device. JP1991066191A. 1991-03-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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