Semiconductor optical integrated element and manufacture thereof
文献类型：专利
| 作者 | MURATA SHIGERU; YAMAGUCHI MASAYUKI |
| 发表日期 | 1991-04-15 |
| 专利号 | JP1991089579A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical integrated element and manufacture thereof |
| 英文摘要 | PURPOSE:To facilitate manufacture and achieve optical coupling efficiency of about 100% by causing a light emitting region to include an active layer consisting of multiple quantum well structure and causing a light modulating region to include a semiconductor layer in which multiple quantum well structure is randomized. CONSTITUTION:A distributed feedback type semiconductor (DFB) laser region 100 includes an active layer consisting of a semiconductor layer (MQW layer) 30 with multiple quantum well structure, and a modulator region 200 includes a semiconductor layer (MQW randomized layer) 40 in which multiple quantum well structure, same as that of the active layer, is randomized. DFB laser light can be modulated by applying an electric field to the MQW randomized layer 40 due to Franz-Keldysh effect. Because the MQW randomized layer 40 is optically continuously connected to the original MQW layer 30, optical scattering is scarcely found at the boundary part between the DFB laser region 100 and the light modulator region 200 so that coupling efficiency of nearly 100% can be achieved. |
| 公开日期 | 1991-04-15 |
| 申请日期 | 1989-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50576]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MURATA SHIGERU,YAMAGUCHI MASAYUKI. Semiconductor optical integrated element and manufacture thereof. JP1991089579A. 1991-04-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。