Electrode structure of semiconductor laser
文献类型：专利
| 作者 | UEHARA KUNIO |
| 发表日期 | 1991-10-24 |
| 专利号 | JP1991238888A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Electrode structure of semiconductor laser |
| 英文摘要 | PURPOSE:To make it possible to secure a necessary electrode strength while keeping an electrode area small sufficiently, by a method wherein a part of a metal film forming a bonding pad is shaped in indentation and a distance between the fore end of a projecting part of the film and a contact part of a bonding wire with the bonding pad is specified. CONSTITUTION:The area of a metal film 21 being smaller than that of an insulating film 3, a part of the metal film 21 projecting from a stripe contact part 12 thereof toward the outer periphery of a chip 1 and forming a bonding pad 22 reaches the outer periphery 222 of the chip and/or the part of the metal film 21 forming the bonding pad 22 is shaped in indentation, a distance between the fore end of the projecting part and a contact part of a bonding wire 4 with the bonding pad 22 being set to be 50mum or above. By this method, a necessary electrode strength can be secured while the area of the bonding pad 22 being kept small. |
| 公开日期 | 1991-10-24 |
| 申请日期 | 1990-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50599]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | UEHARA KUNIO. Electrode structure of semiconductor laser. JP1991238888A. 1991-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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