Element for inspecting semiconductor laser with diffraction grating and inspecting method
文献类型：专利
| 作者 | TSUBOTA TAKASHI |
| 发表日期 | 1992-01-07 |
| 专利号 | JP1992001548A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Element for inspecting semiconductor laser with diffraction grating and inspecting method |
| 英文摘要 | PURPOSE:To make measurement with the good accuracy of a characteristic 'KL' by providing a window layer in the side part of a diffraction grating to form a cleaveage face, thereby forming the above element. CONSTITUTION:While block layers 64, 66 have the effect of confining light into an active layer 36 in a direction P, these layers hardly affect the measuring accuracy of the element characteristic 'KL'. Since both end faces of the diffraction grating 44 in the direction P bond to the cleavage faces 54, 56 via the window layers 50, 52, the feedback quantity of the light to the layer 36 by the faces 50, 52 is substantially eliminated. The difference in the refractive index between the materials for forming the layers 64, 64 and 36 is extremely small and, therefore, the light fed back to the layer 36 at the boundary between both is extremely little. The sum of the feedback quantity of the light by the faces 54, 56 and the boundary can be decreased to <=0.1%. The feedback of the light to the layer 36 by the grating 44 is, therefore, maintained while the feedback quantity of the light by the cleavage faces and the boundary is decreased. The element characteristic 'KL' is thus measured with the good accuracy and high reliability. |
| 公开日期 | 1992-01-07 |
| 申请日期 | 1990-04-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50610]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TSUBOTA TAKASHI. Element for inspecting semiconductor laser with diffraction grating and inspecting method. JP1992001548A. 1992-01-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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