Semiconductor wavelength control element and semiconductor laser
文献类型：专利
| 作者 | KAMEDA TOSHIHIRO |
| 发表日期 | 1992-01-13 |
| 专利号 | JP1992007884A |
| 著作权人 | ANRITSU CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor wavelength control element and semiconductor laser |
| 英文摘要 | PURPOSE:To increase the change of refractive index of a wavelength control region and enlarge the shift amount of wavelength, by constituting a plurality of guide layers. CONSTITUTION:The following are formed; a plurality of guide layers 4, 7 which are formed on a semiconductor substrate 1, isolated almost in parallel by interposing a barrier layer 5, and optically coupled with each other, a diffraction grating 3 arranged on the guide layer 4, and control electrodes 9, 10 for controlling the carrier concentration of the guide layers 4, 7. In this case, by stacking the guide layers while interposing the barrier layer whose thickness is available for optical coupling, the light confinement more perfect than the case of single layer is realized. Thereby the refraction index can be largely changed in a wavelength control region, and wavelength can be adjusted in a wide range. |
| 公开日期 | 1992-01-13 |
| 申请日期 | 1990-04-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50615]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANRITSU CORP |
| 推荐引用方式 GB/T 7714 | KAMEDA TOSHIHIRO. Semiconductor wavelength control element and semiconductor laser. JP1992007884A. 1992-01-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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