Formation of electrode on iii-v compound semiconductor p layer
文献类型：专利
| 作者 | UCHIDA AKIRA; KOBAYASHI SHINJI; YAGIHARA TAKESHI; KAMATA HIROMI; OKA SADAJI; MIURA AKIRA |
| 发表日期 | 1992-01-14 |
| 专利号 | JP1992010571A |
| 著作权人 | 横河電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of electrode on iii-v compound semiconductor p layer |
| 英文摘要 | PURPOSE:To enable an electrode to be ohmically bonded well to the P layer of a III-V compound semiconductor by a method wherein the electrode is formed of material formed in such a process that ZnSi, WSi, and Au are successively laminated and annealed. CONSTITUTION:An InGaAs P layer doped with a P-type dopant such as Be or the like is used, ZnSi whose volume mixing ratio of Zn to Si is nearly 1:1, WSi whose volume mixing ratio of W to Si is 1:2, and Au are successively formed on the P layer as thick as 50Angstrom or so, 100-3000Angstrom , and 1000Angstrom or above through sputtering. Then, the semiconductor device concerned is put in an oven and annealed at a temperature of 300 deg.C for 30 minutes. In result, an alloy is induced in a region of the surface of the P layer as thick as 100Angstrom due to the diffusion of Zn, so that a good ohmic electrode excellent in adhesion and free of spiky diffusion can be obtained. |
| 公开日期 | 1992-01-14 |
| 申请日期 | 1990-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50617]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 横河電機株式会社 |
| 推荐引用方式 GB/T 7714 | UCHIDA AKIRA,KOBAYASHI SHINJI,YAGIHARA TAKESHI,et al. Formation of electrode on iii-v compound semiconductor p layer. JP1992010571A. 1992-01-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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