Active optical element of semiconductor provided with window region
文献类型：专利
| 作者 | KAMEDA TOSHIHIRO; ASAI AKIHIKO; TSUCHIYA TOSHIO; NAGAI HARUO |
| 发表日期 | 1992-02-18 |
| 专利号 | JP1992048792A |
| 著作权人 | ANRITSU CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Active optical element of semiconductor provided with window region |
| 英文摘要 | PURPOSE:To eliminate the disorder of a far-field pattern and to realize a high coupling efficiency to a fiber by installing a window region provided with a guide layer having a shape which does not spread light radiated to the window region from a region including an active layer to a direction perpendicular to a semiconductor substrate of a semiconductor active optical element and which spreads it only in the horizontal direction. CONSTITUTION:A guide layer 5 which is optically coupled to a light-emitting region 8 having an active layer 3 and which is extended to the advance direction of light is provided. Light in a window region 9 at this time is propagated to the guide layer 5 in a concentrated manner. The thickness and the refractive index of the guide layer 5 are set in such a way that the leak of light especially in the vertical direction is not extended to the surface 12 of the window region; the guide layer 5 has an extended structure as compared with the active layer 3 in such a way that light is not spread two-dimensionally in the horizontal direction. As a result, the amount of reflected light returning to the active layer 3 in the window region 9 is reduced sharply. It is possible to realize a structure whose reflection is low and in which the far-field pattern of radiated light is not disordered. |
| 公开日期 | 1992-02-18 |
| 申请日期 | 1990-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50623]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANRITSU CORP |
| 推荐引用方式 GB/T 7714 | KAMEDA TOSHIHIRO,ASAI AKIHIKO,TSUCHIYA TOSHIO,et al. Active optical element of semiconductor provided with window region. JP1992048792A. 1992-02-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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