Window structure semiconductor laser and manufacture method
文献类型：专利
| 作者 | KOMAZAKI IWAO |
| 发表日期 | 1992-02-27 |
| 专利号 | JP1992061391A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Window structure semiconductor laser and manufacture method |
| 英文摘要 | PURPOSE:To make it possible to couple an active range with a window range smoothly, facilitate an etching process for the formation of the window, and embody a semiconductor laser whose output is large with good yield. CONSTITUTION:The etching depth of a water having a quantum well structure active layer is arranged to be near an active layer. Si ion beam implantation is made into an n type optical guide layer 4 at a shallow depth before regrowth and turns crystal defect on the surface. A layer whose impurity concentration exceeds 2X10cm is installed on the boarder between an active layer and a window layer. The active layer in the remaining window region is placed out of order so that the hysteresis characteristics may be eliminated. At the same time when the active layer does not remain, it is possible to reduce current leakage by way of the interface of regrowth. Both regrowth and annealing can proceed simultaneously wile the loss of the high concentration impurity layer produced by Si ion beam implantation is small, say, about 10cm, which does not increase its threshold to a large extent. Therefore, this construction makes it possible to manufacture a semiconductor laser whose output is large and highly efficient with an excellent coupling efficiency. |
| 公开日期 | 1992-02-27 |
| 申请日期 | 1990-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50626]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KOMAZAKI IWAO. Window structure semiconductor laser and manufacture method. JP1992061391A. 1992-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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