Mesa type semiconductor device and manufacture thereof
文献类型：专利
| 作者 | SATO NORIFUMI |
| 发表日期 | 1992-03-09 |
| 专利号 | JP1992073984A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Mesa type semiconductor device and manufacture thereof |
| 英文摘要 | PURPOSE:To manufacture a mesa type semiconductor device in a small size by continuously extending an insulating film in the bottom and side of a mesa on a laminate, and forming it without extending it on the upper surface of the mesa. CONSTITUTION:A mask layer 21 extended in a stripe state is formed on a laminate l', and with the layer 21 as a mask a mesa 8 extended in a stripe state is formed by etching. Then, an insulating film 9 made, for example, of silicon oxide, continuously extended in the bottom and side of the mesa 8 on a laminate 21 without removing the layer 21 from the mesa 8 of the laminate 1 and not extended on the upper surface of the mesa 8, is formed. Then, the layer 21 is removed from the mesa 8 of the laminate l, the upper surface of the mesa 8 of the laminate l is exposed externally over the entire area, and an electrode layer 11 continuously extended on the film 9 and the entire upper surface of the mesa 8 of the laminate l and coupled from the upper surface of the mesa 8 of the laminate l to the entire area, is formed. |
| 公开日期 | 1992-03-09 |
| 申请日期 | 1990-07-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50628]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | SATO NORIFUMI. Mesa type semiconductor device and manufacture thereof. JP1992073984A. 1992-03-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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