Impurity diffusion into inalp compound semiconductor
文献类型：专利
| 作者 | ARAI TORU; TERUI YOSHINORI; TERASAKI RYUICHI |
| 发表日期 | 1992-07-10 |
| 专利号 | JP1992192516A |
| 著作权人 | DENKI KAGAKU KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Impurity diffusion into inalp compound semiconductor |
| 英文摘要 | PURPOSE:To enable formation of a P type semiconductor layer in the vicinity of the extreme surface in the depth of about 1mum of a InAlLP semiconductor by using a substance obtained by adding phosphorus to a compound including zinc and phosphorus as a diffusion source, setting the phosphorus pressure in the system to 0.01 to 3 atmospheric pressure, heating the substance up to 670 to 750 deg.C and diffusing it and thereafter cooling it quickly. CONSTITUTION:As a InAlP group wafer 3, InAlP, InAlGaP, etc., are sued and as a diffusion source 2 obtained by adding phosphorus to a compound including zinc and phosphorus, a substance ading P such as Zn3P2, ZnP2 is used. A quartz ampul 1 is heated at 670 to 750 deg.C. The phosphorus pressure in the system can be adjusted by kind and quantity of diffusion source 2 and a heating temperature and the desirable pressure is set to 0.01 to 3 atmospheric pressure. After the diffusion processing, a quartz ampul 1 is quickly cooled by ice water. Thereby, a P type semiconductor layer can be formed in the vicinity of the extreme surface in the depth of about 1mum of the InAlP semiconductor. |
| 公开日期 | 1992-07-10 |
| 申请日期 | 1990-11-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50660]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | DENKI KAGAKU KOGYO KK |
| 推荐引用方式 GB/T 7714 | ARAI TORU,TERUI YOSHINORI,TERASAKI RYUICHI. Impurity diffusion into inalp compound semiconductor. JP1992192516A. 1992-07-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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