Semiconductor laser device and manufacture of semiconductor laser device
文献类型：专利
| 作者 | HONDA MASAHARU; HAMADA HIROYOSHI; SHONO MASAYUKI; HIROYAMA RYOJI |
| 发表日期 | 1992-08-06 |
| 专利号 | JP1992216689A |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device wherein manufacturing is enabled with high reproducibility, yield is enhanced, heat dissipation is improved, output is increased, and life is lengthened, by arranging a plurality of trenches whose side surfaces are inclined, on the upper part of a semiconductor substrate, and forming an isolation layer for isolating elements. CONSTITUTION:A plurality of trenches whose side surfaces are inclined are formed on the upper surface of a semiconductor substrate 2. An AlGaInP layer is crystal-grown on the substrate 2, and a high resistance AlGaInP layer is crystal-grown in the above-mentioned trenches, thereby forming an isolation layer 10 for isolating elements. |
| 公开日期 | 1992-08-06 |
| 申请日期 | 1990-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50664]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | HONDA MASAHARU,HAMADA HIROYOSHI,SHONO MASAYUKI,et al. Semiconductor laser device and manufacture of semiconductor laser device. JP1992216689A. 1992-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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