Bistable semiconductor laser
文献类型：专利
| 作者 | UENOHARA HIROYUKI; IWAMURA HIDETOSHI |
| 发表日期 | 1992-08-10 |
| 专利号 | JP1992218990A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Bistable semiconductor laser |
| 英文摘要 | PURPOSE:To provide a bistable semiconductor laser, which is excellent in the coupling efficiency of a plurality of external input lights and is great in the adaptivity to two-dimension parallel processing. CONSTITUTION:In a bistable semiconductor laser, which has a gain region 5 which generates light and amplifies it and a saturable absorptive region 3 which exists in a resonator and absorbs light and generates bistable operation by the saturation of its own absorption coefficient, the light is emitted (light output 14) in vertical direction to the semiconductor crystal face by forming the gain region 5 and the saturable absorptive region 3 in the direction of growth of the semiconductor crystals, and further 45 deg. mirrors 12 and 13 for coupling the input lights 15 and 16 from outside entered vertically to the crystal substrate with the saturable absorptive region 3 or two-dimension diffraction gratings are provided on both sides of the saturable absorptive region 3. |
| 公开日期 | 1992-08-10 |
| 申请日期 | 1990-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50666]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | UENOHARA HIROYUKI,IWAMURA HIDETOSHI. Bistable semiconductor laser. JP1992218990A. 1992-08-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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