Fabrication of semiconductor light emitting device
文献类型：专利
| 作者 | SANADA TATSUYUKI; FURUYA AKIRA |
| 发表日期 | 1992-10-16 |
| 专利号 | JP1992291979A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Fabrication of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve the characteristics of a semiconductor laser in the information of a semiconductor layer electrode structure by preventing an active laser from a cleavage part upon a high-melting-point contact metal layer from being damaged to prevent the deterioration of device characteristics and make uniform an injected current for improvement of a heat dissipation characteristic. CONSTITUTION:The surface of a semiconductor laser body is covered with an SiO2 film 16, and a stripe window 17 is opened. A high melting point contact metal layer is formed by covering with a Ti film 18 and a Pt film 19. The surface of the metal layer is covered with an Au film. Au plating 21 is formed through selective plating. An Au film 20 of a predetermined width part (in the vicinity of a cleavage portion) on the stripe window is left behind, and the Au film other than the foregoing portion is removed. The high-melting-point contact metal layer (Pt film 19, Ti film) is etched and removed by reactive ion etching (IBE) using the Au plating 21 as a mask. |
| 公开日期 | 1992-10-16 |
| 申请日期 | 1991-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50687]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SANADA TATSUYUKI,FURUYA AKIRA. Fabrication of semiconductor light emitting device. JP1992291979A. 1992-10-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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