Heat sink for semiconductor
文献类型：专利
| 作者 | SAITO HIDEHO |
| 发表日期 | 1992-12-25 |
| 专利号 | JP1992373155A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Heat sink for semiconductor |
| 英文摘要 | PURPOSE:To enable high speed modulation and high frequency output of a semiconductor optical element or a semiconductor electronic element and improve heat dissipation, by wiring and forming a microstrip on insulative material excellent in thermal conductivity. CONSTITUTION:A microstrip 32 is formed on electrically insulative material 31 excellent in thermal conductivity. An impedance matching resistor 34 for obtaining a matched impedance state with the input impedance or the output impedance of a semiconductor element is added. The microstrip 31 is opened at a point on the microstrip 31 of a half-wavelength of microwave distant from the coupling part of the impedance matching resistor 34 and the microstrip 31, or shorted at a point of a quater wavelength of the microwave distant from the coupling part. Thereby high speed modulation and high frequency output of a semiconductor optical element or a semiconductor electronic element are enabled, and heat dissipation is improved. |
| 公开日期 | 1992-12-25 |
| 申请日期 | 1991-06-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50712]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | SAITO HIDEHO. Heat sink for semiconductor. JP1992373155A. 1992-12-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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