Strained quantum well semiconductor laser and its manufacture
文献类型：专利
| 作者 | OTSUKA NOBUYUKI; KITO MASAHIRO; MATSUI YASUSHI |
| 发表日期 | 1992-12-25 |
| 专利号 | JP1992373190A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Strained quantum well semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To improve the laser characteristic of a strained quantum well semiconductor laser by introducing a compressive strain to a well layer as an reaction to a tensile strain produced in a barrier layer having a lattice constant smaller than those of a substrate and the well layer by using the barrier layer. CONSTITUTION:An InP substrate 1 and well layer 4 have the same lattice constant and the lattice constant of a barrier layer 3 is smaller than that of the substrate 1 and layer 4. However, the lattice constants practically become the same in the planar direction, since the crystal lattices of the substrate 1 and layers 3 and 4 must be continuously coupled, and a tensile stress is produced in the barrier layer 3 by the expanded amount of the layer 3. As a result, the barrier layer 3 tends to contract to its original size and the well layer 4 contracts so that the layer can be balanced with the layer 3 in stress while the layer 4 is drawn by the layer 3. Consequently, the tensile strain in the layer 3 is relieved and a compressive strain is generated in the layer 4 by the contracted amount. Therefore, the film thickness condition of the well layer 4 can be relieved and the laser characteristic of this strained quantum well semiconductor laser can be improved. |
| 公开日期 | 1992-12-25 |
| 申请日期 | 1991-06-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50713]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OTSUKA NOBUYUKI,KITO MASAHIRO,MATSUI YASUSHI. Strained quantum well semiconductor laser and its manufacture. JP1992373190A. 1992-12-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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