Semiconductor optical source capable of compensating for temperature-induced variation of laser oscillation threshold
文献类型：专利
| 作者 | ODAGAWA, TETSUFUMI |
| 发表日期 | 1993-12-15 |
| 专利号 | EP0573670A1 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical source capable of compensating for temperature-induced variation of laser oscillation threshold |
| 英文摘要 | A semiconductor optical source includes a first laser diode (1) supplied with a signal current pulse and a first bias current for producing an output optical signal pulse in response to the signal current pulse, a first biasing circuit (4) for supplying the first bias current to the first laser diode, a second laser diode (2) supplied with a second bias current for producing an output optical beam in response thereto, a second biasing circuit for supplying the second bias current to the first laser diode; a heat sink for maintaining the first laser diode and the second laser diode at a substantially identical temperature; and a threshold detection circuit (3) for detecting a threshold of laser oscillation of the second laser diode, wherein the threshold detection circuit controls the first biasing circuit such that the first bias current is maintained at a level that is related to the threshold of the second laser diode. |
| 公开日期 | 1993-12-15 |
| 申请日期 | 1992-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50804]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | ODAGAWA, TETSUFUMI. Semiconductor optical source capable of compensating for temperature-induced variation of laser oscillation threshold. EP0573670A1. 1993-12-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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