Integrated semiconductor devices and method for manufacture thereof
文献类型：专利
| 作者 | GOOSSEN, KEITH WAYNE |
| 发表日期 | 1994-12-28 |
| 专利号 | EP0631317A2 |
| 著作权人 | AT&T CORP. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated semiconductor devices and method for manufacture thereof |
| 英文摘要 | An integrated semiconductor device is formed by bonding the conductors (CI1, CI2) of one fabricated semiconductor device (SD) having a substrate (SIS) to the conductors (COI1,COI2) on another fabricated semiconductor device (MOD) having a substrate (SUB), flowing an etch-resist (PH) in the form of a photoresist between the devices, allowing the etch-resist to dry, and removing the substrate (SUB) from one of the semiconductor devices. Preferably the etch-resist is retained to impart mechanical strength to the device. More specifically, a hybrid semiconductor device is formed by bonding the conductors of one or more GaAs/AlGaAs multiple quantum well modulators to conductors on an IC chip, flowing a photoresist between the modulators and the chip, allowing the photoresist to dry, and removing the substrate from the modulator. |
| 公开日期 | 1994-12-28 |
| 申请日期 | 1994-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50895]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T CORP. |
| 推荐引用方式 GB/T 7714 | GOOSSEN, KEITH WAYNE. Integrated semiconductor devices and method for manufacture thereof. EP0631317A2. 1994-12-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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