中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optische halfgeleiderinrichtingen en werkwijze voor het maken daarvan.

文献类型:专利

作者TOHRU TAKIGUCHI; KATSUHIKO GOTO; HIROTAKA KIZUKI
发表日期1995-02-16
专利号NL9401192A
著作权人MITSUBISHI DENKI KABUSHIKI KAISHA
国家荷兰
文献子类发明申请
其他题名Optische halfgeleiderinrichtingen en werkwijze voor het maken daarvan.
英文摘要A semiconductor optical device includes a first semiconductor layer, and a diffraction grating disposed on the first semiconductor layer. The diffraction grating includes portions of a superlattice layer grown on the first semiconductor layer and including alternatingly arranged second semiconductor layers of a semiconductor material in which mass transport hardly occurs, during growth of other semiconductor layers and third semiconductor layers of a semiconductor material different from the material of the second semiconductor layers. The device includes a fourth semiconductor layer burying the diffraction grating. In this structure, since the second semiconductor layers are included in the diffraction grating, the shape of the diffraction grating is maintained during the vapor phase deposition of the fourth semiconductor layer. Therefore, the thickness, amplitude, and pitch of the diffraction grating that determine the optical coupling constant are controlled with high precision.
公开日期1995-02-16
申请日期1994-07-20
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/50902]  
专题半导体激光器专利数据库
作者单位MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式
GB/T 7714
TOHRU TAKIGUCHI,KATSUHIKO GOTO,HIROTAKA KIZUKI. Optische halfgeleiderinrichtingen en werkwijze voor het maken daarvan.. NL9401192A. 1995-02-16.

入库方式: OAI收割

来源:西安光学精密机械研究所

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