Surface-normal semiconductor optical cavity devices
文献类型：专利
| 作者 | GOOSSEN KEITH WAYNE |
| 发表日期 | 1995-11-03 |
| 专利号 | CA2147315A1 |
| 著作权人 | AT&T CORP. |
| 国家 | 加拿大 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface-normal semiconductor optical cavity devices |
| 英文摘要 | A multi-layer mirror structure included in a surface-normal semiconductoroptical cavity is fabricated in a deposition reactor dedicated to that purpose alone.Additional layers of the device are subsequently deposited on top of the mirrorstructure in a second reactor. In practice, the dedicated reactor produces layerswhose thickness variations over their entire extents are considerably less than thethickness variations of layers made in the second reactor. This coupled with the factthat the actual achieved thickness of the mirror structure can be convenientlymeasured before commencing deposition of a prescribed thickness of the additionallayers makes it possible to fabricate a specified-thickness optical cavity within tighttolerances in a high-yield manner. |
| 公开日期 | 1995-11-03 |
| 申请日期 | 1995-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/50960]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T CORP. |
| 推荐引用方式 GB/T 7714 | GOOSSEN KEITH WAYNE. Surface-normal semiconductor optical cavity devices. CA2147315A1. 1995-11-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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