Lenses for semiconductor light emitting devices
文献类型：专利
| 作者 | STEPHEN, PETER, NAJDA; GEOFFREY, DUGGAN |
| 发表日期 | 1999-01-27 |
| 专利号 | GB2327533A |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Lenses for semiconductor light emitting devices |
| 英文摘要 | A semiconductor lens 20 is integrally formed with a laser or light-emitting diode by growing alternating layers 21 of a graded aluminium-containing semiconductor material, such as AIGaAs, and layers 22 of a non-aluminium-containing semiconductor material, such as GaAs, which serve to increase the structural strength. The layers 21 are graded so that the bottom layer 21 has the lowest aluminium grading and the top layer 21 has the highest aluminium grading. A GaAs cap layer 23 is provided to prevent oxidation through the upper surface of the top layer 2 Selective oxidation is then effected from the side so as to produce a shaped region 25 of unoxidised semiconductor material of refractive index N 1 and a region 26 of oxidised semiconductor material of refractive index N 2 . Optionally the layer 21 is then selectively etched so as to remove the oxidised semiconductor material. Whether or not such material is removed, a high refractive index lens is produced with a surrounding low refractive index region. This avoids the need to use an external optical arrangement to provide the required beam shape, and thus enables a more compact system to be produced. |
| 公开日期 | 1999-01-27 |
| 申请日期 | 1997-07-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51112]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | STEPHEN, PETER, NAJDA,GEOFFREY, DUGGAN. Lenses for semiconductor light emitting devices. GB2327533A. 1999-01-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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