中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Array type laser diode and manufacturing method thereof

文献类型:专利

作者YONEDA, ISAO
发表日期2002-01-10
专利号US20020003826A1
著作权人NEC CORPORATION
国家美国
文献子类发明申请
其他题名Array type laser diode and manufacturing method thereof
英文摘要An array type laser diode and a manufacturing method thereof, in which positioning markers are not needed at channels except a central channel, are provided. Regardless of the number of channels, the following characteristic can be improved at the same time: the stress lessening characteristic inside laser diodes, the bonding strength at connecting wires, and the heat radiation performance of laser diodes, and the mounting of bonding wires to the laser diodes. At the array type laser diode, regardless of the number of channels, positioning markers are provided only at a central channel and are not provided at plural channels at the both sides of the central channel. And a passive alignment technology is applied to form the array type laser diode. With this, mentioned above characteristics can be achieved.
公开日期2002-01-10
申请日期2001-09-14
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/51317]  
专题半导体激光器专利数据库
作者单位NEC CORPORATION
推荐引用方式
GB/T 7714
YONEDA, ISAO. Array type laser diode and manufacturing method thereof. US20020003826A1. 2002-01-10.

入库方式: OAI收割

来源:西安光学精密机械研究所

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