Array type laser diode and manufacturing method thereof
文献类型:专利
作者 | YONEDA, ISAO |
发表日期 | 2002-01-10 |
专利号 | US20020003826A1 |
著作权人 | NEC CORPORATION |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Array type laser diode and manufacturing method thereof |
英文摘要 | An array type laser diode and a manufacturing method thereof, in which positioning markers are not needed at channels except a central channel, are provided. Regardless of the number of channels, the following characteristic can be improved at the same time: the stress lessening characteristic inside laser diodes, the bonding strength at connecting wires, and the heat radiation performance of laser diodes, and the mounting of bonding wires to the laser diodes. At the array type laser diode, regardless of the number of channels, positioning markers are provided only at a central channel and are not provided at plural channels at the both sides of the central channel. And a passive alignment technology is applied to form the array type laser diode. With this, mentioned above characteristics can be achieved. |
公开日期 | 2002-01-10 |
申请日期 | 2001-09-14 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/51317] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC CORPORATION |
推荐引用方式 GB/T 7714 | YONEDA, ISAO. Array type laser diode and manufacturing method thereof. US20020003826A1. 2002-01-10. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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