Surface emitting semiconductor laser device capable of improving heat radiation efficiency and its manufacture method
文献类型：专利
| 作者 | OTSUBO, KOJI |
| 发表日期 | 2002-07-18 |
| 专利号 | US20020094001A1 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emitting semiconductor laser device capable of improving heat radiation efficiency and its manufacture method |
| 英文摘要 | A lower multi-layer mirror is disposed on a substrate made of a first semiconductor having a first lattice constant. The lower multi-layer mirror has a lamination structure that a first layer made of an oxide of a second semiconductor and a second layer made of a third semiconductor are alternately stacked. A strain-relaxation layer is disposed on the lower multi-layer mirror, the strain-relaxation layer being made of a fourth semiconductor having a second lattice constant different from the first lattice constant. An active layer is disposed on the strain-relaxation layer. The active layer including a luminescence region is made of a fifth semiconductor having a third lattice constant different from the first and second lattice constants. An upper multi-layer mirror is disposed on the active layer. A surface-emitting semiconductor laser is provided which has a high efficiency and a low heat resistance. |
| 公开日期 | 2002-07-18 |
| 申请日期 | 2001-10-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51318]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | OTSUBO, KOJI. Surface emitting semiconductor laser device capable of improving heat radiation efficiency and its manufacture method. US20020094001A1. 2002-07-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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