Method for manufacturing semiconductor laser module, semiconductor laser module and Raman amplifier
文献类型：专利
| 作者 | IRIE, YUICHIRO; AIKIYO, TAKESHI |
| 发表日期 | 2002-07-18 |
| 专利号 | US20020094590A1 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for manufacturing semiconductor laser module, semiconductor laser module and Raman amplifier |
| 英文摘要 | First of all, an optical system consisting of first and second lenses 6, 7 is positioned in front of a semiconductor laser diode 1 such that the optical coupling efficiency of a laser beam emitted from the front facet of a semiconductor laser diode 1 with a second optical fiber 3 will be maximized. The optical coupling efficiency of the laser beam with the second optical fiber 3 may be measured, for example, using an optical power meter 9 connected to the end of the second optical fiber 3. Subsequently, a first optical fiber 2 including a diffraction grating K is positioned behind the semiconductor laser diode 1 such that the output of the laser beam emitted from the front facet of the semiconductor laser diode 1 will be maximized. The output of the laser beam is measured by the optical power meter 9 as in the optical coupling efficiency. |
| 公开日期 | 2002-07-18 |
| 申请日期 | 2001-11-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51319]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | IRIE, YUICHIRO,AIKIYO, TAKESHI. Method for manufacturing semiconductor laser module, semiconductor laser module and Raman amplifier. US20020094590A1. 2002-07-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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