Complex-coupled distributed feedback semiconductor laser device
文献类型：专利
| 作者 | KISE, TOMOFUIMI; FUNABASHI, MASAKI |
| 发表日期 | 2004-01-22 |
| 专利号 | US20040013144A1 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Complex-coupled distributed feedback semiconductor laser device |
| 英文摘要 | A complex-coupled DFB laser device including a resonant cavity, and a diffraction grating and an active layer disposed in the resonant cavity, the diffraction grating including alternately a grating layer having an absorption layer for absorbing laser having an emission wavelength of the resonant cavity, and a buried layer filled in a space around the grating layer and formed by a material having an equivalent refractive index higher than that of the grating layer and a bandgap wavelength smaller than that of the active layer. The DFB laser can be realized lasing in the single mode at the longer wavelength side than the Bragg's wavelength, and scarcely generates the multi-mode lasing and the mode hopping irrespective of a higher injection current. |
| 公开日期 | 2004-01-22 |
| 申请日期 | 2002-01-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51329]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | KISE, TOMOFUIMI,FUNABASHI, MASAKI. Complex-coupled distributed feedback semiconductor laser device. US20040013144A1. 2004-01-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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