Multiple semiconductor laser structure with narrow wavelength distribution
文献类型：专利
| 作者 | HANKE, CHRISTIAN |
| 发表日期 | 2002-09-12 |
| 专利号 | US20020126722A1 |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS GMBH & CO. OHG |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Multiple semiconductor laser structure with narrow wavelength distribution |
| 英文摘要 | In the case of a multiple semiconductor laser structure containing a plurality of laser pn junctions stacked vertically one on top of the other, different operating temperatures of the active zones occur during operation on account of the different distance within the layer structure from a common heat sink. The displacements in the emission wavelength caused by the temperature influence are compensated by a variation of the thickness and/or material composition of the active zones, so that a narrow wavelength distribution is achieved. |
| 公开日期 | 2002-09-12 |
| 申请日期 | 2002-01-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51333]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS GMBH & CO. OHG |
| 推荐引用方式 GB/T 7714 | HANKE, CHRISTIAN. Multiple semiconductor laser structure with narrow wavelength distribution. US20020126722A1. 2002-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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