中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Wavelength locked integrated optical source structure using multiple microcavity

文献类型:专利

作者JANG, DONG-HOON; BANG, DONG-SOO; LEE, JUNG-KEE
发表日期2002-12-26
专利号US20020196821A1
著作权人SAMSUNG ELECTRONIC CO., LTD.
国家美国
文献子类发明申请
其他题名Wavelength locked integrated optical source structure using multiple microcavity
英文摘要A wavelength-locked, integrated optical signal source structure using a semiconductor laser device is disclosed. The optical source structure has a semiconductor laser formed on a semiconductor substrate, and an etched portion coupled with an output end of the semiconductor laser. The etched portion is configured to pass on a first amount of light beam radiated by the semiconductor laser, and to reflect a second amount of light beam by a given reflection angle. A multiple microcavity is formed in a position spaced apart from the etched portion, and the first amount of light beam is incident upon the multiple microcavity. The optical source structure has a first optical detector for detecting the first amount of light beam passing through the multiple microcavity, and a second optical detector for detecting the second amount of light beam reflected by a slanted, reflecting surface portion of the etched portion. The relative change in the light intensity in the first and second optical detectors is measured out to maintain a constant optical wavelength.
公开日期2002-12-26
申请日期2002-03-11
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/51337]  
专题半导体激光器专利数据库
作者单位SAMSUNG ELECTRONIC CO., LTD.
推荐引用方式
GB/T 7714
JANG, DONG-HOON,BANG, DONG-SOO,LEE, JUNG-KEE. Wavelength locked integrated optical source structure using multiple microcavity. US20020196821A1. 2002-12-26.

入库方式: OAI收割

来源:西安光学精密机械研究所

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