Semiconductor laser and photo module using the same
文献类型：专利
| 作者 | KUDO, MAKOTO; OUCHI, KIYOSHI; MISHIMA, TOMOYOSHI |
| 发表日期 | 2003-05-08 |
| 专利号 | US20030086461A1 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and photo module using the same |
| 英文摘要 | A semiconductor laser which has an active layer of a lattice strain of less than 2% of a thickness mean on a GaAs substrate and can be used in a long wavelength band of 3 mum band or more and a photo module which uses the semiconductor laser are provided. The semiconductor laser device has a first semiconductor layer 5 and second semiconductor layers 4, the layer 5 and the layers 4 forming a type-II heterojunction structure, in which an energy of conduction band edge of said first conductor layer 5 is larger than the energy of conduction band of said second semiconductor layers 4. The device has third semiconductor layers 6 as barrier layers formed on both sides of said type-II heterojunction structure. In the device, the second semiconductor layers 4 are arranged on both sides of the first semiconductor layer 5 and the thickness of the first semiconductor layer 5 is set in such a degree of thickness that a wave function of an electron of a quantum well formed by making the second semiconductor layer well layers is coupled. |
| 公开日期 | 2003-05-08 |
| 申请日期 | 2002-11-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51361]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | KUDO, MAKOTO,OUCHI, KIYOSHI,MISHIMA, TOMOYOSHI. Semiconductor laser and photo module using the same. US20030086461A1. 2003-05-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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