High coherent power, two-dimensional surface�emitting semiconductor diode array laser
文献类型：专利
| 作者 | BOTEZ, DAN |
| 发表日期 | 2003-09-02 |
| 专利号 | AU2003207591A1 |
| 著作权人 | WISCONSIN ALUMINI RESEARCH FOUNDATION |
| 国家 | 澳大利亚 |
| 文献子类 | 发明申请 |
| 其他题名 | High coherent power, two-dimensional surface�emitting semiconductor diode array laser |
| 英文摘要 | A semiconductor laser is formed on a semiconductor substrate with an array of laterally spaced laser device elements each including a second order distributed feedback grating bounded by distributed Bragg reflector gratings and a central phase shift in the distributed feedback grating. The device elements in which the distributed feedback grating and the distributed Bragg reflector gratings are formed have a lower effective index than the index of the interelement regions and are spaced so as to form an antiguided array. A twodimensional semiconductor array laser may be formed of four or more of the semiconductor array devices arranged on the substrate to provide long range coherent coupling via traveling waves of light between the device elements. |
| 公开日期 | 2003-09-02 |
| 申请日期 | 2003-01-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51367]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WISCONSIN ALUMINI RESEARCH FOUNDATION |
| 推荐引用方式 GB/T 7714 | BOTEZ, DAN. High coherent power, two-dimensional surface�emitting semiconductor diode array laser. AU2003207591A1. 2003-09-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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