Method for manufacturing semiconductor laser apparatus
文献类型：专利
| 作者 | KINEI, SATOFUMI |
| 发表日期 | 2004-11-11 |
| 专利号 | US20040224440A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for manufacturing semiconductor laser apparatus |
| 英文摘要 | On a mount surface portion of a semiconductor laser device, a first bonding layer is so formed that a first region near a light-emitting area is exposed. On a mount surface portion of a sub mount is formed a second bonding layer having a melting point T2 lower than a melting point T1 of the first bonding layer. The first and second bonding layers are heated in a mutually pressed state at a temperature T lower than the melting point T1 of the first bonding layer but higher than the melting point T2 of the second bonding layer (T1>T>T2) to bond the semiconductor laser device to the sub mount. When the semiconductor laser device is bonded to the sub mount, the first region serves as the non-bonding area. |
| 公开日期 | 2004-11-11 |
| 申请日期 | 2004-05-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51420]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KINEI, SATOFUMI. Method for manufacturing semiconductor laser apparatus. US20040224440A1. 2004-11-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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