Semiconductor device and method
文献类型：专利
| 作者 | FENG, MILTON; HOLONYAK, NICK, JR.; HAFEZ, WALID |
| 发表日期 | 2005-03-03 |
| 专利号 | WO2005020287A2 |
| 著作权人 | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and method |
| 英文摘要 | Methods and devices are disclosed for producing controllable light emission from a bipolar transistor. Also, a method is disclosed for increasing the speed of a bipolar transistor, including the following steps: providing a bipolar transistor having emitter (150), base (140), and collector (130) regions; providing electrodes (115, 145, 165) for coupling electrical signals with the emitter (150), base (140), and collector (130) regions; and adapting the base region (140) to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region (140). |
| 公开日期 | 2005-03-03 |
| 申请日期 | 2004-08-20 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51435]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
| 推荐引用方式 GB/T 7714 | FENG, MILTON,HOLONYAK, NICK, JR.,HAFEZ, WALID. Semiconductor device and method. WO2005020287A2. 2005-03-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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