Semiconductor light emitting device and manufacturing method for the same
文献类型：专利
| 作者 | ISHIDA, MASAYA |
| 发表日期 | 2005-03-24 |
| 专利号 | US20050062058A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and manufacturing method for the same |
| 英文摘要 | An object of the present invention is to provide a semiconductor light emitting device having a long lifespan by improving yield in mounting. In order to achieve this object, a semiconductor light emitting device includes a semiconductor light emitting element chip having an n-type GaN substrate, a heat sink made of SiC onto which the semiconductor light emitting element chip is mounted, a solder made of AuSn which joins the n-type GaN substrate to the heat sink, a support base onto which the heat sink is mounted, and a solder made of In or SnAgCu which joins the heat sink to the support base. The solder has a thickness in a range from 1 μm or more to 20 μm or less, and the heat sink has a thickness in a range from 100 μm or more to 500 μm or less. |
| 公开日期 | 2005-03-24 |
| 申请日期 | 2004-09-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51442]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | ISHIDA, MASAYA. Semiconductor light emitting device and manufacturing method for the same. US20050062058A1. 2005-03-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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