Ohmic electrode structure and semiconductor element
文献类型：专利
| 作者 | SHIMAMOTO, TOSHITAKA; YOSHIKAWA, KENJI; MAKITA, KOUJI |
| 发表日期 | 2008-10-09 |
| 专利号 | WO2008120432A1 |
| 著作权人 | PANASONIC CORPORATION |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Ohmic electrode structure and semiconductor element |
| 英文摘要 | An ohmic electrode structure is provided with a AuGeNi alloy layer (13) arranged on an n-type GaAs layer; and a laminated body composed of bonded metal layers (15, 17) arranged on the AuGeNi alloy layer (13) and barrier metal layers (16, 18) arranged on the bonded metal layers (15, 17). The laminated body is arranged for two cycles or more. On a GaAs contact layer, especially on an n-type electrode, surface diffusion of Ga in the semiconductor and Ni in the AuGeNi alloy layer required for forming ohmic contact at the n-type electrode can be suppressed. Thus, the low resistance ohmic electrode structure and a semiconductor element having such structure are provided. |
| 公开日期 | 2008-10-09 |
| 申请日期 | 2008-02-21 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51618]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | SHIMAMOTO, TOSHITAKA,YOSHIKAWA, KENJI,MAKITA, KOUJI. Ohmic electrode structure and semiconductor element. WO2008120432A1. 2008-10-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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