Laser diode with improved heat dissipation
文献类型：专利
| 作者 | TAN, WEI-SIN; BARNES, JENNIFER MARY |
| 发表日期 | 2009-09-03 |
| 专利号 | US20090219966A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser diode with improved heat dissipation |
| 英文摘要 | A laser diode structure that includes two different insulator layers, one to maintain good optical confinement, typically located at the sides of the laser ridge, and another to improve the heat dissipation properties, typically located on the etched surfaces away from the ridge. |
| 公开日期 | 2009-09-03 |
| 申请日期 | 2008-03-03 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51621]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAN, WEI-SIN,BARNES, JENNIFER MARY. Laser diode with improved heat dissipation. US20090219966A1. 2009-09-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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