Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus
文献类型：专利
| 作者 | HATA, MASAYUKI; KUNOH, YASUMITSU; BESSHO, YASUYUKI |
| 发表日期 | 2008-09-11 |
| 专利号 | US20080219309A1 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus |
| 英文摘要 | A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction. |
| 公开日期 | 2008-09-11 |
| 申请日期 | 2008-03-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51622]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | HATA, MASAYUKI,KUNOH, YASUMITSU,BESSHO, YASUYUKI. Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus. US20080219309A1. 2008-09-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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