Opto-semiconductor devices
文献类型：专利
| 作者 | INOUE, YUTAKA; SAITOH, KAZUNORI; HAMADA, HIROSHI; HAGIMOTO, MASATO; SORIMACHI, SUSUMU |
| 发表日期 | 2009-02-12 |
| 专利号 | US20090041076A1 |
| 著作权人 | USHIO OPTO SEMICONDUCTORS, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Opto-semiconductor devices |
| 英文摘要 | An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than 50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer. |
| 公开日期 | 2009-02-12 |
| 申请日期 | 2008-09-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51651]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | USHIO OPTO SEMICONDUCTORS, INC. |
| 推荐引用方式 GB/T 7714 | INOUE, YUTAKA,SAITOH, KAZUNORI,HAMADA, HIROSHI,et al. Opto-semiconductor devices. US20090041076A1. 2009-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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