PNP light emitting transistor and method
文献类型：专利
| 作者 | WALTER, GABRIEL; HOLONYAK, JR., NICK; FENG, MILTON; CHAN, RICHARD |
| 发表日期 | 2009-05-07 |
| 专利号 | US20090115346A1 |
| 著作权人 | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | PNP light emitting transistor and method |
| 英文摘要 | A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an emitter contact coupled with the second tunnel junction, and a base contact coupled with the base; whereby, signals applied with respect to the collector, base, and emitter contacts causes light emission from the base by radiative recombination in the base. |
| 公开日期 | 2009-05-07 |
| 申请日期 | 2008-09-25 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51652]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
| 推荐引用方式 GB/T 7714 | WALTER, GABRIEL,HOLONYAK, JR., NICK,FENG, MILTON,et al. PNP light emitting transistor and method. US20090115346A1. 2009-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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